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The Microchip Technology 1N6075 is a fast recovery rectifier diode designed for through-hole mounting in the DO-41 axial package. It features a repetitive peak reverse voltage of 100 V and an average forward rectified current of 1 A. The device exhibits a low forward voltage drop of 1.1 V at rated current and a maximum reverse leakage current of 5 µA. Key electrical characteristics include a 75 ns maximum reverse recovery time and a surge current capability of 30 A. It operates reliably within a junction temperature range of -65 °C to +175 °C, with a power dissipation rating of 500 mW.
Verify the specific ordering suffix against official Microchip documentation to confirm exact specifications, as suffixes may indicate variations in packaging or testing criteria. Confirm RoHS compliance status directly from the manufacturer datasheet prior to procurement. Ensure the selected component matches the required axial lead form factor and voltage ratings for the intended circuit design.
Select this component when a standard 1 A axial rectifier with fast recovery characteristics is required. The 100 V reverse voltage rating suits low-voltage DC applications. Consider the 75 ns recovery time for switching frequencies where standard rectifiers may exhibit excessive losses. Verify that the 500 mW power dissipation aligns with the thermal management capabilities of the target PCB layout.
The 1N6075 belongs to the industry-standard 1N series of silicon planar power rectifiers manufactured by Microchip Technology. This series utilizes a passivated junction construction to ensure long-term reliability under various environmental conditions. The DO-41 axial package provides a robust mechanical solution for through-hole assembly, widely used in legacy and industrial electronics designs requiring standardized footprint compatibility.
Publicly confirmed substitute part numbers are not available in the provided source material.