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The Microchip Technology 1N6076US is a surface-mount ultrafast recovery rectifier diode rated for 50 V working peak reverse voltage and 6.0 A average rectified forward current at 70°C case temperature. It features a maximum forward voltage of 1.76 V at 18.8 A, a reverse leakage current of 5.0 µA at VRWM, and a reverse recovery time of 30 ns. The device supports a peak forward surge current of 75 A and operates within a junction temperature range of -65°C to +155°C.
Verify the manufacturer origin, as this component was originally produced by Microsemi. Confirm that the specific ordering suffix matches the required package type and screening level. Ensure compliance with RoHS status requirements, as indicated in distributor specifications. Validate the authenticity of the hermetic seal and metallurgical bond integrity upon receipt.
Select the 1N6076US when a 50 V rating and 6 A continuous current capability are required in a surface-mount configuration. Consider the 30 ns reverse recovery time for high-frequency circuits. Evaluate thermal management needs based on the specified thermal resistance and operating temperature limits for the target environment.
This component belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers. These devices share similar construction technologies but vary in current ratings and voltage capabilities. The US suffix denotes the surface-mount D-5B package variant, distinct from the axial-lead versions available in the same series.
Axial-lead equivalents such as 1N6076 are available by removing the US suffix. Other series members like 1N6077US or 1N6078US offer different voltage ratings while maintaining similar current and package characteristics.