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Product Detailed Parameters
- Description：DIODE STANDARD 100V 1.3A EMELF
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io)：1.3A
- Voltage - Forward (Vf) (Max) @ If：1.76 V @ 18.8 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：30 ns
- Current - Reverse Leakage @ Vr：5 µA @ 100 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, E
- Supplier Device Package：E-MELF
- Operating Temperature - Junction：-65°C ~ 155°C
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Overview
The Microchip Technology 1N6077US/TR is a surface-mount ultrafast recovery rectifier diode rated for 100 V working peak reverse voltage and 6.0 A average rectified forward current at an ambient temperature of 70°C. It features a maximum reverse recovery time of 30 ns and a peak forward surge current capability of 75 A. The device utilizes a voidless hermetically sealed glass package with tungsten slugs, offering low thermal resistance of 8.5°C/W. Electrical characteristics include a maximum forward voltage of 1.76 V at 18.8 A and a maximum reverse leakage current of 5.0 µA at the rated voltage.
Feature Summary
- Voidless hermetically sealed glass construction with internal Category I metallurgical bonds
- Ultrafast recovery performance suitable for high-speed switching applications
- High forward surge current capability and controlled avalanche characteristics
- Inherently radiation hard design
Applications
- Military and other high-reliability applications
- Switching power supplies requiring extremely fast switching
- Applications demanding low forward loss
Procurement Notes
Verify component authenticity through authorized Microchip distributors or official channels. Confirm that the specific ordering suffix matches the required tape and reel packaging configuration. Ensure compliance with RoHS status requirements as indicated in the product documentation. Validate that the supplier provides valid traceability records for this high-reliability semiconductor component.
Selection Notes
Select this component when a surface-mount ultrafast recovery rectifier is required for 100 V circuits. The 6 A current rating and 30 ns recovery time make it suitable for high-frequency switching environments. Consider the hermetic glass package for harsh environmental conditions where standard plastic packages may be insufficient. Verify thermal management requirements align with the specified junction temperature range.
Part Context
This device belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers. The series offers various current ratings from 3 A to 12 A and reverse voltages from 50 V to 150 V. All devices in this family share similar voidless hermetically sealed glass construction and ultrafast recovery characteristics designed for high-reliability applications.
Replacement Considerations
Consult the manufacturer's datasheet for direct pin-compatible alternatives within the same series. Verify electrical parameters such as reverse voltage, forward current, and recovery time match application requirements before substitution.
