1N6095

Overview

The GeneSiC Semiconductor 1N6095 is a silicon power Schottky diode housed in a DO-4 (DO-203AA) stud-mount package. It features a maximum repetitive peak reverse voltage of 30 V and supports a continuous forward current of 25 A. The device exhibits a forward voltage of 0.58 V at 25 A and a thermal resistance from junction to case of 1.8 °C/W. Operating temperatures range from -55°C to 150°C, with a storage temperature range of -55°C to 250°C.

Feature Summary

• High surge capability for transient load handling
• Non-ESD sensitive construction
• Stud base configuration for efficient thermal management

Applications

• High-current rectification circuits
• Power supply output stages
• DC-DC converter freewheeling paths

Procurement Notes

Verify the specific suffix designation when ordering, as the 'R' variant indicates reversed polarity where the stud functions as the anode rather than the cathode. Confirm that the DO-4 package dimensions align with the mounting hardware specifications. Ensure thermal interface materials are compatible with the stud surface finish for optimal heat dissipation performance.

Selection Notes

Select this component for applications requiring robust high-current handling with low forward voltage drop. The DO-4 package facilitates direct heatsink mounting, reducing system thermal impedance. Evaluate the 30 V reverse voltage rating against peak line transients to ensure adequate safety margins during operation.

Part Context

This device belongs to the 1N6095 through 1N6096R series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a stud-mount design optimized for high-power density applications. The standard version features a cathode stud, while the R-version reverses this polarity.

Replacement Considerations

Cross-reference with other 30V/40V Schottky diodes in the DO-4 package. Verify pinout compatibility, specifically the stud polarity, before substitution.