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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 30V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N6095R is a silicon power Schottky diode housed in a DO-4 (DO-203AA) stud-mount package. It features a maximum repetitive peak reverse voltage of 40 V and supports a continuous forward current of 25 A. The device exhibits a typical forward voltage of 0.58 V at 25 A and a thermal resistance from junction to case of 1.8 °C/W. Operating temperatures range from -55°C to 150°C, with a non-repetitive surge current rating of 250 A.
Feature Summary
- High surge current capability for robust transient handling
- Stud base configuration facilitates efficient heat dissipation
- Low forward voltage drop minimizes conduction losses
- Not sensitive to electrostatic discharge
Applications
- High-current DC power supply rectification
- Industrial motor drive freewheeling circuits
- Battery charging systems requiring high reliability
Procurement Notes
Verify the specific suffix designation during procurement to confirm terminal polarity. The 'R' suffix indicates reversed leads where the stud functions as the anode rather than the cathode. Confirm that the required voltage and current ratings align with the system's operational limits before ordering.
Selection Notes
Select this component when a low-loss Schottky rectifier is needed in a through-hole stud-mount form factor. Ensure the application can accommodate the physical dimensions of the DO-4 package and provides adequate mounting pressure for the thermal interface. Verify that the 40 V reverse voltage rating exceeds the circuit's peak inverse voltage requirements.
Part Context
This part belongs to the 1N6095 thru 1N6096R series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers variants with different reverse voltage ratings while maintaining consistent current handling capabilities. These devices are designed for general-purpose rectification in industrial and automotive environments.
Replacement Considerations
Direct substitutes within the same series include the 1N6095 and 1N6096. When replacing, ensure the pinout matches the original design, particularly noting that standard versions have a cathode stud while 'R' versions have an anode stud.
