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Product Detailed Parameters
- Description：DIODE SCHOTTKY 40V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N6096 is a silicon Schottky rectifier diode housed in a DO-4 stud-mount package. It features a maximum repetitive peak reverse voltage of 40 V and supports a continuous forward current of 25 A. The device exhibits a typical forward voltage drop of 0.58 V at rated current and maintains an operating junction temperature range from -55°C to 150°C. Standard polarity designates the stud as the cathode, while the (R) variant reverses this configuration.
Feature Summary
- High surge capability for handling transient current loads
- Stud base construction for efficient thermal dissipation
- Non-sensitive to electrostatic discharge
Applications
- General purpose rectification in power supplies
- Free-wheeling diodes in inductive load circuits
- DC power conversion systems
Procurement Notes
Verify the specific polarity suffix when ordering. The standard 1N6096 has the stud as the cathode, whereas the 1N6096R variant reverses this with the stud as the anode. Confirm the required terminal configuration matches the circuit board layout before procurement to ensure correct installation.
Selection Notes
Select this component for applications requiring robust high-current rectification with low forward voltage loss. The DO-4 package facilitates direct mounting to heatsinks via the stud terminal. Ensure the system's reverse voltage requirements do not exceed the 40 V rating and that thermal management strategies accommodate the specified junction temperature limits.
Part Context
This part belongs to the 1N6095 through 1N6096R series of silicon Schottky diodes manufactured by GeneSiC Semiconductor. These devices are designed for high-efficiency power conversion, offering superior performance over standard PN junction rectifiers due to their lower forward voltage characteristics and fast switching capabilities inherent to Schottky technology.
Replacement Considerations
Cross-reference with other 40V 25A Schottky diodes in DO-4 packages. Verify that substitute parts match the exact stud polarity (cathode vs. anode) and maintain equivalent thermal resistance and surge current ratings to ensure compatibility without redesigning the mounting hardware.
