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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 40V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N6096R is a silicon Schottky rectifier diode housed in a DO-4 stud-mount package. It features a maximum repetitive peak reverse voltage of 40 V and supports a continuous forward current of 25 A. The device exhibits a maximum forward voltage of 0.58 V at 25 A and a reverse leakage current of 2 mA at 20 V and 125 °C. It operates within a junction temperature range of -55 °C to 150 °C, with a thermal resistance from junction to case of 21 °C/W.
Feature Summary
- High surge capability for handling transient currents
- Low forward voltage drop for improved efficiency
- Not sensitive to electrostatic discharge
Applications
- General purpose rectification in power supplies
- Free-wheeling applications in inductive loads
- DC-to-DC converter circuits
Procurement Notes
Verify the specific suffix 'R' indicates reversed polarity where the stud functions as the anode rather than the cathode. Confirm the manufacturer designation matches GeneSiC Semiconductor specifications. Ensure the DO-4 package dimensions align with the required mounting hardware constraints before finalizing procurement orders.
Selection Notes
Select this component when a low forward voltage drop is critical for system efficiency. The 40 V rating suits low-voltage DC bus applications. Verify that the 25 A continuous current capacity meets the load requirements. Consider the stud-mount configuration for effective heat dissipation without additional heatsinking infrastructure.
Part Context
This part belongs to the 1N6095 through 1N6096R series of silicon Schottky diodes. These devices are designed for high-efficiency rectification in industrial and commercial power electronics. The series utilizes a rugged DO-4 package to withstand mechanical stress and thermal cycling in demanding environments.
Replacement Considerations
Cross-reference with other 40 V, 25 A Schottky diodes in DO-4 packages. Verify pinout compatibility, specifically the stud polarity orientation. Ensure thermal resistance and forward voltage characteristics match the original design requirements.
