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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 30V 50A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：50A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 30 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N6097R is a silicon power Schottky diode housed in a DO-5 (DO-203AB) stud-mount package. It features a maximum repetitive peak reverse voltage of 30 V and an average forward current rating of 50 A per package. The device exhibits a maximum instantaneous forward voltage of 0.7 V at 50 A and 25 °C, with a corresponding maximum instantaneous reverse current of 1 mA at rated DC blocking voltage. Thermal resistance from junction to case is specified at 1.30 °C/W. The component supports an operating temperature range from -55 °C to 150 °C.
Feature Summary
- High surge capability for handling transient current loads
- Reverse polarity configuration where the stud terminal functions as the anode
- Non-ESD sensitive design for robust handling
Applications
- High-current rectification circuits
- Power supply output stages
- DC-DC converter freewheeling paths
Procurement Notes
Verify that the specific part number suffix 'R' corresponds to the reversed polarity configuration where the stud serves as the anode, distinct from standard polarity variants. Confirm the manufacturer designation aligns with GeneSiC Semiconductor or Navitas Semiconductor Inc., as documentation sources may vary. Ensure the DO-5 package dimensions match the required mounting torque specifications for the application board.
Selection Notes
Select this component when a low forward voltage drop is required for high-efficiency power conversion at 50 A. The stud-mount DO-5 package facilitates direct thermal coupling to heatsinks, making it suitable for applications requiring high thermal dissipation without additional PCB copper area constraints. Verify that the 30 V reverse voltage rating provides sufficient margin for the circuit's peak inverse voltage conditions.
Part Context
This device belongs to the 1N6097/1N6098 series of silicon power Schottky diodes designed for high-current applications. The series utilizes a rugged DO-5 stud package to manage significant thermal loads. The 'R' suffix denotes a specific terminal configuration variant within this product family, differentiating it from standard polarity versions while maintaining identical electrical performance characteristics.
Replacement Considerations
Consult official cross-reference lists for equivalent DO-5 stud-mounted Schottky diodes with matching 30 V and 50 A ratings. Ensure any substitute maintains the same stud-as-anode polarity if the 'R' configuration is critical for the existing assembly.
