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Product Detailed Parameters
- Description：SOT-223 N-CHANNEL POWER MOSFETS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The UMW 1N60G is an N-channel Power MOSFET manufactured by Unisonic Technologies (UMW). It features a Drain-Source Voltage (V_DSS) of 600V and a continuous Drain Current (I_D) of 1.2A at 25°C. The device has a maximum On-Resistance (R_DS(on)) of 11.5Ω at V_GS = 10V. It utilizes the SOT-223 surface-mount package. Key electrical characteristics include an ultra-low typical gate charge of 5.0nC and a low reverse transfer capacitance (C_rss) of 3.0pF, supporting fast switching capabilities.
Feature Summary
- Designed for high voltage applications with rugged avalanche characteristics
- Features ultra-low gate charge to minimize switching losses
- Optimized for fast switching capability in power conversion circuits
Applications
- High speed switching applications in power supplies
- PWM motor controls
- High efficient DC to DC converters
- Bridge circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and lead-free status. Ensure the component matches the required voltage and current ratings for the target application. Confirm RoHS compliance and halogen-free status if environmental regulations apply. Cross-reference the part number with authorized distributors to ensure authenticity and traceability.
Selection Notes
Select this component for designs requiring high-voltage isolation with moderate current handling in compact surface-mount layouts. The low gate charge makes it suitable for efficiency-critical applications where switching losses must be minimized. Consider the thermal performance of the SOT-223 package relative to the expected power dissipation in the final system design.
Part Context
This component belongs to the UTC 1N60 series of high-voltage MOSFETs. The series includes variants with different packaging options such as TO-92, TO-220, and TO-252. The 1N60G specifically denotes the SOT-223 package variant within this family, sharing core electrical specifications with other package versions while differing in physical footprint and thermal characteristics.
Replacement Considerations
Direct substitutes include other 1N60 series parts from Unisonic Technologies with equivalent electrical ratings but different packages, such as 1N60L (TO-220) or 1N60T (TO-252). Verify pinout compatibility and thermal management requirements when substituting across different package types.
