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The STMicroelectronics 1N6263 is a metal-to-silicon junction Schottky diode housed in a DO-35 glass axial package. It features a maximum repetitive peak reverse voltage of 60 V and a maximum average forward current of 15 mA. The device exhibits a low turn-on voltage, typically around 410 mV, and ultrafast switching characteristics. Power dissipation is rated at 400 mW with an infinite heat sink. The component operates within a junction temperature range up to 200 °C and includes a PN junction guard ring for protection.
Verify the specific manufacturer source, as the 1N6263 designation is historically associated with multiple producers including Galaxy Electrical. Confirm current availability status, as some distributors indicate scheduled obsolescence or discontinuation for this part number. Ensure the received component matches the required DO-35 glass package and electrical specifications before integration into designs.
Select this component for applications requiring fast recovery and low forward voltage in small signal environments. The DO-35 package limits current handling to 15 mA average, making it unsuitable for power rectification. Consider thermal management if operating near the 200 °C junction limit. Verify compatibility with UHF/VHF detection requirements due to its specific switching speed.
The 1N6263 is classified as a small signal Schottky diode. It differs from standard silicon rectifiers by utilizing a metal-to-silicon junction rather than a PN junction for the main barrier, enabling faster switching. The DO-35 form factor is a standard glass-encapsulated axial leaded package commonly used in through-hole PCB assemblies for low-power electronic circuits.
Public confirmed substitute part numbers are not available in the provided documentation. Users should verify equivalent specifications such as 60 V reverse voltage, 15 mA forward current, and DO-35 packaging when sourcing alternatives from other manufacturers.