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Product Detailed Parameters
- Description：DIODE SCHOTTKY 45V 60A DO203AB
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：45 V
- Current - Average Rectified (Io)：60A
- Voltage - Forward (Vf) (Max) @ If：680 mV @ 60 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 45 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-203AB (DO-5)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The 1N6392 is a Schottky rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a single silicon element with a maximum average forward current of 60 A and a maximum working peak reverse voltage of 45 V. The device supports junction temperatures from -55 °C to 175 °C, with a maximum non-repetitive peak forward current of 1000 A at 60 Hz. Forward voltage drop ranges from 0.47 V at 10 A to 0.82 V at 120 A. Reverse leakage current reaches 600 mA at 175 °C. Junction capacitance is 3000 pF, and series inductance is typically 7.5 nH. The component utilizes DO-203AB (DO-5) packaging.
Feature Summary
- Optimized for low reverse leakage current at elevated temperatures
- Proprietary barrier technology enabling reliable operation up to 175 °C junction temperature
- Guard ring structure designed for enhanced ruggedness and long-term reliability
- Hermetic packaging construction
Applications
- Switching power supplies
- Converters
- Free-wheeling diodes
- Reverse battery protection
Procurement Notes
Verify the specific manufacturer source, as the datasheet originates from International Rectifier (IR), now part of Infineon. Confirm that the requested part number matches the JEDEC registered values provided in the official documentation. Ensure compatibility with the specified DO-203AB (DO-5) mounting requirements and torque specifications during integration.
Selection Notes
Select this component for high-frequency applications requiring low forward voltage drop and high surge current capability. Evaluate thermal resistance parameters against the expected case temperature and duty cycle conditions. Consider the hermetic package and military qualification options if operating in extreme environments or demanding reliability standards.
Part Context
This component belongs to the Schottky rectifier category within the Vishay General Semiconductor - Diodes Division portfolio. It is designed for industrial-level applications and conforms to the JEDEC Outline DO-203AB (DO-5). The device is characterized by its ability to handle high average forward currents while maintaining stability under high-temperature conditions.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum junction temperature range for the 1N6392?
The maximum junction temperature range is -55 °C to 175 °C.
How does the reverse leakage current vary with temperature?
Reverse leakage current increases with temperature, reaching a maximum of 600 mA at a junction temperature of 175 °C.
What is the typical series inductance of the 1N6392?
The typical series inductance is 7.5 nH, measured from the top of the terminal to the mounting plane.
