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Product Detailed Parameters
- Description：DIODE STD 225V 400MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：225 V
- Current - Average Rectified (Io)：400mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 400 mA
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：50 nA @ 225 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N645-1E3/TR is a silicon switching diode designed for signal and computer applications. It features a peak non-repetitive reverse voltage of 225 V and a forward current rating of 400 mA. The component utilizes a DO-35 (DO-204AH) glass axial leaded package, suitable for through-hole mounting. Key electrical characteristics include a maximum reverse leakage current of 100 nA and a typical recovery time of 2 ns. It operates within a temperature range of -65°C to +175°C and is supplied in a reel packaging format.
Feature Summary
- High-speed switching capability with fast recovery time for digital logic circuits
- Robust thermal performance supporting extended operating temperatures up to 175°C
- Glass passivated junction construction for enhanced reliability and stability
Applications
- Digital logic interface protection
- Computer circuit signal rectification
- General purpose high-speed switching
Procurement Notes
Verify the specific manufacturer source, as the 1N645 designation has historical associations with multiple entities including Microsemi. Confirm that the '1E3' suffix indicates RoHS compliance and lead-free status per current Microchip specifications. Ensure the DO-35 package dimensions match your PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a standard silicon switching diode with 225V reverse voltage and 400mA forward current capacity is required. It is appropriate for designs needing fast recovery characteristics in a compact axial package. Consider the -65°C to +175°C operating range for harsh environment applications where higher thermal tolerance than standard plastic packages allows.
Part Context
This part belongs to the legacy 1N series of silicon switching diodes, originally standardized by JEDEC. Microchip Technology continues production under this numbering system, maintaining compatibility with original specifications. The device serves as a general-purpose rectifier and switch in electronic circuits, bridging older design standards with modern manufacturing processes.
Replacement Considerations
Direct substitutes include other 1N645 variants from different manufacturers, provided they meet the 225V PIV and 400mA IF ratings. Verify pinout compatibility and package style (DO-35/DO-204AH) to ensure mechanical fit. Electrical parameters such as reverse leakage and recovery time should be compared against the new component's datasheet.
