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The Microchip Technology 1N645 is a standard recovery rectifier diode designed for general-purpose applications. It features a maximum DC reverse voltage of 225 V and an average forward rectified current of 400 mA. The device exhibits a forward voltage drop of 1 V at the rated current and maintains a low reverse leakage current of 50 nA at maximum reverse voltage. Operating junction temperatures range from -65°C to 175°C, ensuring reliability in demanding environments.
Verify the specific suffix (e.g., UR-1) against the MIL-PRF-19500/240 specification to confirm military-grade qualification levels such as JAN, JANTX, or JANTXV. Confirm package type DO-213AA matches design requirements. Check RoHS status as some variants may not comply with environmental directives.
Select this component when a robust standard recovery diode with high thermal tolerance is required. Ensure the circuit's peak inverse voltage does not exceed 225 V and the load current remains within the 400 mA limit. Consider the DO-213AA surface mount package for automated assembly processes.
This part belongs to the 1N645 series of standard recovery rectifiers manufactured by Microchip Technology under the MIL-PRF-19500/240 specification. It serves as a ruggedized semiconductor solution for aerospace and defense electronics where long-term reliability and wide temperature operation are critical design constraints.
Substitutes must match the 225 V reverse voltage, 400 mA current rating, and DO-213AA package. Verify that alternative standard recovery diodes meet the same thermal and electrical performance criteria without compromising system integrity.