SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N647-1E3/TR is a silicon planar junction rectifier manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current of 400 mA. The device utilizes a DO-204AH (DO-35) axial through-hole package. Electrical characteristics include a maximum DC reverse voltage of 400 V, a forward voltage drop of 1 V at 400 mA, and a maximum reverse leakage current of 50 nA at 400 V. The component supports a junction temperature range from -65°C to +175°C.
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm RoHS compliance status via the official datasheet as environmental declarations may vary by production batch. Ensure the supplier provides traceability documentation if required for quality assurance protocols.
Select this component for designs requiring a 400 V reverse voltage rating with moderate current handling. The DO-35 package is suitable for through-hole mounting processes. Consider the thermal management requirements given the wide operating temperature range and ensure circuit design accommodates the specified forward voltage characteristics.
This part belongs to the standard rectifier family produced by Microchip Technology. It is designed for general-purpose switching and rectification tasks. The product line emphasizes reliability and consistency across various industrial and commercial electronics applications.
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter margins before replacing.