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The 1N6483HE3_A/H is a standard recovery rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features an 800 V maximum DC reverse voltage and supports a 1 A average rectified current. The device utilizes a DO-213AB MELF glass package for surface mount installation. Key electrical characteristics include a forward voltage of 1.1 V at 1 A, a reverse leakage current of 10 µA at 800 V, and a junction temperature range from -65°C to 175°C.
Verify the specific suffix designation against the manufacturer's latest documentation to confirm exact packaging and qualification status. Ensure that the DO-213AB MELF package dimensions align with the intended PCB footprint. Confirm compliance requirements such as RoHS and REACH status directly from the official datasheet before finalizing procurement specifications.
Select this component when a surface mount solution is required for high-voltage rectification up to 800 V. The 1 A current rating makes it appropriate for low-to-medium power applications. Consider the wide operating temperature range for environments subject to thermal extremes. Verify that the standard recovery time meets the circuit's switching frequency requirements without excessive losses.
This part belongs to Vishay's SUPERECTIFIER series, which focuses on reliable surface mount rectifiers. The 1N6483 variant specifically addresses the need for high voltage blocking capabilities in compact packages. It serves as a robust alternative to through-hole equivalents in modern automated assembly lines.
Cross-reference with other 800 V, 1 A SMD rectifiers in the DO-213AB package. Ensure that any substitute matches the forward voltage drop and reverse leakage specifications to maintain circuit performance integrity.