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The 1N6483HE3_A/I is a standard recovery rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 800 V and an average forward rectified current of 1 A. The device exhibits a typical forward voltage drop of 1.1 V at the rated current and maintains a low reverse leakage current of 10 µA at full reverse voltage. Designed for surface mount applications, it utilizes the DO-213AB (MELF glass) package. The component supports a wide operating junction temperature range from -65°C to +175°C and holds AEC-Q101 qualification for automotive reliability standards.
Verify the specific suffix configuration against official Vishay documentation to ensure compatibility with required packaging formats. Confirm that the AEC-Q101 qualification status aligns with target automotive or industrial specifications. Cross-reference the DO-213AB MELF glass package dimensions with PCB layout constraints prior to integration. Ensure sourcing channels provide authentic components with traceable manufacturing data.
Select this component when designing circuits necessitating high reverse voltage blocking capabilities combined with moderate current handling. The extended temperature range makes it suitable for harsh environment applications where standard silicon devices may fail. Consider the MELF glass package for its hermetic sealing properties and compact footprint compared to larger through-hole alternatives.
This part belongs to the SUPERECTIFIER series, which emphasizes reliability and robustness in surface mount rectifier applications. The 1N6483 variant specifically addresses high-voltage requirements within the standard recovery category. Its design integrates advanced glass passivation techniques to minimize leakage currents and enhance long-term stability under electrical stress.
Public confirmed substitute part numbers are not available in the provided source material.