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The 1N6484HE3_A/H is a standard recovery rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a single diode configuration housed in the DO-213AB (MELF) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 1 A. Key electrical parameters include a maximum non-repetitive peak forward surge current of 30 A, a maximum DC reverse leakage current of 10 µA at rated voltage, and a maximum forward voltage drop of 1.1 V at 1 A. The component operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix against official Vishay documentation to confirm exact manufacturing lot details and compliance status. Ensure the ordering part number matches the required package variant and terminal finish specifications. Cross-reference with authorized distributors to confirm current production status and availability constraints before finalizing procurement plans.
Select this component when a 1000 V rating and 1 A continuous current capacity are required in a compact surface-mount form factor. Consider the standard recovery characteristics for applications where switching speed is not critical. Evaluate the thermal management requirements based on the specified junction temperature limits and ambient operating conditions.
This component belongs to the 1N6484 series of glass-passivated silicon rectifiers from Vishay. The series utilizes the SUPERECTIFIER design philosophy to enhance reliability in surface-mount environments. The HE3 designation indicates lead-free and halogen-free construction compliant with RoHS directives, aligning with modern environmental standards for electronic components.
Consult official Vishay substitution guides for verified equivalents. Generic replacements must match the 1000 V reverse voltage, 1 A forward current, and DO-213AB package dimensions. Verify that alternative parts meet the same thermal and electrical performance criteria.