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The Microchip Technology 1N6492 is a Schottky barrier rectifier diode designed for high-efficiency power conversion applications. It features a maximum DC reverse voltage (Vr) of 45 V and an average forward rectified current (Io) of 3.6 A. The device utilizes a TO-205AF (TO-39) metal can package suitable for through-hole mounting. Key electrical characteristics include a forward voltage (Vf) of 680 mV at 4 A, a reverse leakage current of 2 mA at 45 V, and a junction capacitance of 450 pF at 5 V and 1 MHz. It operates within a junction temperature range of -65°C to 175°C.
Verify the specific ordering suffix and manufacturing date code upon purchase. Confirm RoHS compliance status as indicated in official documentation, noting that standard versions may not meet current environmental directives. Ensure the supplier provides valid traceability records and authentic manufacturer packaging to prevent counterfeit components.
Select this component when low forward voltage loss and high current handling are required in a through-hole metal package. Compare against standard PN junction rectifiers for efficiency gains. Verify that the 45 V reverse voltage rating exceeds the peak inverse voltage in the target circuit. Ensure the TO-205AF footprint matches the PCB layout requirements.
The 1N6492 belongs to the standard 1N series of discrete semiconductor diodes manufactured by Microchip Technology. It is part of a long-standing lineage of Schottky rectifiers used in industrial and commercial electronics. The TO-205AF package is a traditional hermetic-style metal case often specified for reliability-critical or legacy designs requiring through-hole assembly.
Consult official substitution guides for equivalent Schottky rectifiers with matching 45 V and 3.6 A ratings in TO-205AF packages.