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Product Detailed Parameters
- Description：SOT-223 N-CHANNEL POWER MOSFET
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The UMW 1N65G is an N-Channel MOSFET designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 1A at case temperature. The device has a gate-source breakdown voltage of ±30V and a typical on-resistance (RDS(on)) of 11Ω at 10V gate drive with 0.5A current. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-223 surface-mount package.
Feature Summary
- High voltage capability with 650V drain-source rating
- Surface-mount construction in SOT-223 package
- Wide operating temperature range up to +150°C
Applications
- General-purpose high-voltage switching
- Power management circuits
Procurement Notes
Verify the specific suffix G indicates the SOT-223 package configuration when ordering. Confirm datasheet specifications match design requirements, particularly regarding thermal management for the 1A current rating. Ensure compatibility with standard surface-mount assembly processes for the specified footprint.
Selection Notes
Select this component for designs requiring moderate current handling at high voltages in a compact surface-mount form factor. Consider the relatively high on-resistance compared to lower voltage devices; ensure thermal dissipation capabilities align with the expected power loss in the target application environment.
Part Context
This part belongs to the UMW 1N65 series of N-Channel MOSFETs. The series includes variants such as the 1N65L in TO-252 packaging. These components are engineered for general-purpose power switching tasks where high voltage isolation is required alongside efficient surface-mount integration.
Replacement Considerations
Check for direct substitutes within the same voltage and current class. Verify pinout compatibility and package dimensions before substituting with other manufacturers' 650V N-Channel MOSFETs in SOT-223 packages.
