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The Microchip Technology 1N6622US/TR is a single ultra-fast recovery rectifier diode designed for surface-mount applications. It features a reverse voltage rating of 660 V and a forward current capacity of 2 A. The device exhibits a forward voltage drop of 1.6 V and a maximum reverse leakage current of 500 nA. Its ultra-fast recovery time is specified at 45 ns, with a peak repetitive reverse voltage of 660 V. The component operates within a temperature range of -65°C to +150°C and utilizes the A-MELF (DO-213AA) package.
Verify the specific suffix configuration against the manufacturer's datasheet to ensure correct packaging and qualification levels. Confirm that the procurement channel provides valid traceability documentation required for military-grade components. Check for any recent obsolescence notices or lifecycle status updates from Microchip Technology before finalizing orders.
Select this component when ultra-fast recovery performance is critical for minimizing switching losses in high-frequency environments. The 660 V rating supports high-voltage isolation requirements, while the 2 A current capability suits moderate power applications. Ensure the PCB layout accommodates the A-MELF footprint and thermal management needs for operation up to 150°C.
This part belongs to Microchip's family of ultra-fast recovery rectifiers, which are engineered for demanding environments requiring high reliability. The series is characterized by its robust construction and compliance with stringent military specifications, making it distinct from standard commercial-grade diodes used in general consumer electronics.
Consult official substitution lists for equivalent parts meeting MIL-PRF-19500/585 standards. Verify pinout compatibility and electrical parameter equivalence for any cross-reference candidates.