1N6623E3

Overview

The Microchip Technology 1N6623E3 is a general-purpose rectifier diode designed for standard rectification applications. It features an 800 V reverse voltage rating and supports a forward current of 1 A. The device exhibits a maximum reverse leakage current of 500 nA at 800 V and a reverse recovery time of 50 ns. It is housed in a through-hole axial package, specifically Case A, suitable for power supply circuits.

Feature Summary

• High reverse voltage capability for robust performance
• Fast reverse recovery characteristics
• Low reverse leakage current
• Through-hole axial mounting configuration

Applications

• Power supply circuits
• General-purpose rectification
• Standard rectifying applications

Procurement Notes

Verify the specific datasheet version to confirm exact electrical parameters such as reverse recovery time and leakage current. Ensure the package type matches the required through-hole footprint. Check for RoHS compliance status if environmental regulations apply to the final assembly. Confirm manufacturer details as Microchip Technology acquired Microsemi assets.

Selection Notes

Select this component when high reverse voltage blocking is required alongside fast switching speeds. The 1 A current rating suits moderate power applications. Consider the through-hole form factor for legacy or high-reliability board designs. Compare with similar UFR/FRR series diodes for alternative sourcing options.

Part Context

This part belongs to the 1N6623 series of ultra-fast recovery rectifiers. It is often referenced under JANTXV1N6623US/TR for military-grade variants. The E3 suffix typically indicates lead-free composition. It serves as a replacement for older silicon rectifier standards requiring improved speed.

Replacement Considerations

JANTXV1N6623US/TR is a documented variant within the same family.