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The 1N6624/TR is a single ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a forward current of 1.5 A and a repetitive peak reverse voltage of 900 V. The device utilizes an axial E-Package-2 through-hole configuration. Key electrical parameters include a maximum forward voltage of 1.8 V, a reverse leakage current of 500 nA, and a typical recovery time of 50 ns. The component supports a maximum surge current of 20 A and operates within a temperature range from -65 °C to +150 °C.
Verify the specific revision level and lot traceability documentation upon receipt to ensure compliance with MIL-PRF-19500/585 requirements. Confirm that the axial lead form factor matches the target PCB footprint. Request material certification and test reports to validate the ultrafast recovery performance and leakage current specifications against the official datasheet limits.
Select this component when a high-voltage, high-reliability rectifier with fast recovery is required for through-hole assembly. The 900 V rating provides sufficient margin for high-voltage DC bus applications. Ensure the design accounts for the 1.5 A continuous current limit and the 20 A surge capability during transient events. Verify thermal management strategies are adequate for the specified operating temperature range.
This part belongs to the 1N66xx series of ultrafast recovery rectifiers produced by Microchip Technology, formerly Micrel. The series is designed for applications requiring robust performance under harsh conditions. The 'TR' suffix indicates tape and reel packaging for automated assembly processes. These devices are distinct from standard general-purpose diodes due to their specialized recovery characteristics and military-grade qualification.
The typical recovery time is 50 ns.
Yes, it is military qualified to MIL-PRF-19500/585.