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The Microchip Technology 1N6628US/TR is a surface-mount fast recovery rectifier diode housed in the D-5B (SQ-MELF) package. It features a maximum DC reverse voltage of 600 V and an average forward rectified current of 2.3 A. The device exhibits a typical forward voltage drop of 1.5 V at 4 A and a maximum reverse leakage current of 2 µA at 600 V. Key electrical characteristics include a reverse recovery time of 45 ns and junction capacitance of 40 pF at 10 V, 1 MHz. It operates within a junction temperature range of -65°C to 150°C.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm that the received parts match the specific 1N6628US/TR designation and packaging format. Review the official datasheet for detailed handling instructions and storage conditions to ensure reliability during assembly.
Select this component when a surface-mount fast recovery rectifier with a 600 V rating and 2.3 A current capacity is required. Ensure the design accommodates the D-5B package dimensions and thermal requirements. Compare specifications against alternative packages if board space constraints differ from the SQ-MELF form factor.
This part belongs to the 1N66xxUS series of surface-mount rectifiers manufactured by Microchip Technology. These components are designed as direct replacements for traditional axial leaded equivalents but offer advantages in automated assembly and compact circuit board layouts. The series covers various voltage ratings within the same physical footprint.
Direct cross-reference substitutes may exist within the 1N6628 family variants. Verify pinout compatibility and exact electrical parameters before substituting with other manufacturers' offerings.