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Product Detailed Parameters
- Description：DIODE STANDARD 900V 1.4A D5B
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：900 V
- Current - Average Rectified (Io)：1.4A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：50 ns
- Current - Reverse Leakage @ Vr：4 µA @ 100 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, E
- Supplier Device Package：D-5B
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N6630US is a surface mount ultrafast recovery rectifier diode designed for high-reliability applications. It features a working peak reverse voltage of 900 V and a maximum forward current rating of 1.4 A at 25°C ambient temperature. The device exhibits a maximum reverse recovery time of 50 ns under low current conditions and 60 ns under high current conditions. Electrical characteristics include a maximum forward voltage of 1.40 V at 1.4 A and a maximum reverse leakage current of 2.0 µA at the rated voltage. The component operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Hermetically sealed voidless glass construction with internal Category I metallurgical bonds
- Military qualified to MIL-PRF-19500/590 standards
- Ultrafast recovery performance suitable for high-speed switching
- Inherently radiation hard design
Applications
- Military and other high-reliability applications where failure cannot be tolerated
- Switching power supplies requiring extremely fast switching and low forward loss
- Applications demanding high forward surge current capability
Procurement Notes
Verify that the specific ordering suffix matches the required screening level, as military qualification levels such as JAN, JANTX, or JANS are distinguished by prefixes or suffixes in the part number. Confirm package type D-5B-2 compatibility with your PCB layout. Ensure compliance with RoHS status N requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date to ensure electrical parameters align with your design specifications.
Selection Notes
Select this component when a surface mount ultrafast recovery rectifier with a 900V rating is required. It serves as the SMT equivalent to the axial-leaded 1N6630 series. Consider the thermal derating curves for average forward current if operating above 25°C ambient temperature. Verify that the 75A peak forward surge current capability meets the transient requirements of the circuit design.
Part Context
This device belongs to the 1N6626US through 1N6631US series of voidless-hermetically-sealed surface mount ultrafast recovery glass rectifiers. Manufactured by Microchip Technology's Scottsdale Division, these devices utilize tungsten slugs and copper end caps with tin/lead finishes. The series covers working peak reverse voltages from 200 to 1000 volts, providing industry-standard reliability for critical electronics.
Replacement Considerations
The axial-leaded 1N6630 is the direct through-hole equivalent. Surface mount alternatives within the same series include 1N6629US (800V) and 1N6631US (1000V), provided voltage ratings accommodate the circuit requirements.
