1N6631/TR

Overview

The Microchip Technology 1N6631/TR is a single fast recovery rectifier diode designed for high-efficiency applications. It features a maximum repetitive reverse voltage of 1 kV and an average forward current rating of 2 A. The device exhibits a low forward voltage drop of 1.95 V and a rapid maximum reverse recovery time of 60 ns. With a peak non-repetitive surge current capacity of 60 A and minimal reverse leakage current of 4 uA, it ensures reliable operation across a wide temperature range from -65 C to +150 C.

Feature Summary

• Fast recovery performance with a maximum reverse recovery time of 60 ns
• High thermal stability supporting operation up to +150 C junction temperature
• Low reverse leakage current ensuring minimal power loss in off-state
• Hermetically sealed construction suitable for demanding environments

Applications

• High-frequency switching power supplies
• Free-wheeling rectification in DC-DC converters
• Snubber circuits in high-voltage systems
• General-purpose rectification in industrial electronics

Procurement Notes

Verify the specific ordering suffix TR indicates tape-and-reel packaging configuration when sourcing. Confirm RoHS compliance status as indicated by manufacturer specifications. Ensure the procurement channel provides valid traceability documentation for this component. Validate that the received parts match the Microchip Technology manufacturing origin and part number designation exactly.

Selection Notes

Select this component for designs requiring fast switching characteristics combined with high voltage blocking capability. The 2 A current rating suits moderate power levels where efficiency is critical. Consider the E-Package-2 form factor for through-hole mounting constraints. Evaluate the 60 ns recovery time against circuit switching frequencies to minimize switching losses effectively.

Part Context

This component belongs to the standard 1N series rectifier family manufactured by Microchip Technology. It serves as a discrete semiconductor solution for power conversion tasks. The device utilizes silicon technology to achieve its specified electrical parameters. It is distinct from Zener regulators or other diode types within the broader diode category.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.