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The Microchip Technology 1N6631 is a single fast recovery rectifier diode designed for high-efficiency applications. It features a maximum repetitive peak reverse voltage of 1 kV and an average forward current rating of 2 A. The device exhibits a typical forward voltage drop of 1.95 V at rated current and maintains a low reverse leakage current of 4 uA. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 60 A, a reverse recovery time of 60 ns, and a junction capacitance of 40 pF. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix (e.g., /TR) to confirm packaging type, as standard variants may differ from reel-packaged units. Confirm RoHS compliance status, as some listings indicate non-compliance. Check lead times carefully due to reported long delivery periods. Ensure the ordering quantity aligns with factory pack multiples if purchasing reel versions.
Select this component when a robust axial leaded fast recovery rectifier is required for circuits operating up to 1 kV reverse voltage. Consider the 2 A current rating and 60 ns recovery speed for general high-frequency applications. Evaluate thermal management requirements given the wide operating temperature range and potential for high surge currents during transient events.
This part belongs to the 1N66xx series of hyper-fast recovery rectifiers manufactured by Microchip Technology. These devices are engineered for high-voltage, high-speed switching applications where low reverse leakage and rapid recovery are critical. The series typically spans various voltage ratings while maintaining consistent package styles and performance profiles suitable for industrial and commercial power electronics.
The 1N6631US is documented as a parameter-equivalent surface mount alternative. Verify pinout compatibility and thermal dissipation capabilities when transitioning between through-hole and surface mount packages.