SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N6631E3/TR is a single ultra-fast recovery rectifier diode designed for surface-mount applications. It features a reverse voltage rating of 1100V and an average forward current capacity of 4A. The device exhibits a maximum forward voltage drop of 1.6V and a low reverse leakage current of 4uA. Its ultra-fast recovery time is specified at 80ns, supporting high-efficiency switching operations. The component operates within a temperature range from -65°C to +150°C junction temperature.
Verify the specific suffix E3 against official Microchip documentation to confirm lead-free status and RoHS compliance details. Ensure the package type matches the required PCB footprint. Confirm availability through authorized distributors as supply levels may vary. Validate that the 1100V rating meets the circuit's peak inverse voltage requirements.
Select this component when high voltage isolation and fast switching speeds are critical. The 4A current rating suits moderate power applications requiring reliable rectification. Consider the 80ns recovery time for minimizing switching losses. Verify thermal management capabilities given the wide operating temperature range up to 150°C.
This part belongs to the 1N6631 series of ultra-fast recovery rectifiers manufactured by Microchip Technology. The series offers robust performance for general-purpose and specialized power electronics. The E3 suffix typically indicates environmental compliance features. The TR designation signifies tape and reel packaging for automated assembly processes.
Consult official Microchip cross-reference guides for verified substitutes. Generic replacements must match the 1100V reverse voltage, 4A forward current, and 80ns recovery time specifications. Ensure pinout compatibility and similar thermal characteristics before implementation.