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The Microchip Technology 1N6631US/TR is a single fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive reverse voltage of 1 kV and an average forward current rating of 2 A. The device exhibits a low forward voltage drop of 1.95 V at rated current and a minimal reverse leakage current of 4 uA. Its fast recovery time is specified at 80 ns, supporting high-efficiency switching operations. The component operates within a junction temperature range of -65°C to +150°C and utilizes the E-Package-2 (SQ-MELF) form factor.
Verify that the specific suffix /TR indicates tape-and-reel packaging configuration when sourcing. Confirm RoHS status as non-compliant based on available manufacturer data. Ensure procurement channels provide valid traceability documentation required for military-grade components. Validate that the SQ-MELF package dimensions match the target PCB footprint before finalizing orders.
Select this component when a hermetically sealed surface-mount rectifier with fast recovery characteristics is required. The 1N6631US/TR offers a robust alternative to axial leaded versions while maintaining similar electrical specifications. Consider the 1 kV reverse voltage and 2 A current ratings against circuit demands. The wide operating temperature range supports harsh environment deployment where standard commercial parts may fail.
This part belongs to the 1N66xx series of solid-state devices manufactured by Microchip Technology. It serves as the surface-mount equivalent to traditional axial-leaded rectifiers, providing compatibility with automated assembly processes. The device maintains the high-reliability standards associated with the broader 1N66xx family, utilizing advanced glass passivation techniques for durability.
The 1N6631US is documented as a parameter-equivalent substitute for the 1N6631US/TR.