1N6639US/TR

Overview

The Microchip Technology 1N6639US/TR is a small signal switching diode designed for surface mount applications. It features a peak reverse voltage of 75 V and an average forward current rating of 300 mA. The device utilizes a D-5B package and exhibits a maximum reverse leakage current of 100 nA at 75 V. It operates within a junction temperature range of -65°C to +175°C and includes a fast recovery characteristic with a reverse recovery time of 4 ns.

Feature Summary

• Surface mount construction in a compact SQ-MELF, E package
• Fast recovery performance suitable for high-speed switching
• Extended operating temperature range for harsh environments

Applications

• Computer diode circuits
• Signal switching applications
• High-speed rectification tasks

Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging configuration. Confirm that the component meets the required MIL-PRF-19500/609 standards if military grade qualification is necessary for the design. Ensure the D-5B footprint matches the PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a low-capacitance, fast-switching diode is required in a surface mount form factor. The 75 V reverse voltage rating suits low-voltage logic and signal processing interfaces. Consider the 300 mA current limit for power handling requirements in the target circuit topology.

Part Context

This part belongs to the 1N6639 series of switching diodes manufactured by Microchip Technology. The series offers various package options including through-hole and surface mount variants. The US designation typically denotes a specific hermetic or non-cavity glass package style within the manufacturer's portfolio.

Replacement Considerations

JAN1N6639US serves as a verified substitute part number within the same product family.