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The Microchip Technology 1N6641US/TR is a switching diode designed for signal or computer applications. It features a maximum repetitive reverse voltage of 75 V and a working peak reverse voltage of 50 V. The device supports an operating current of 300 mA with a pulsed forward current capacity of 200 mA. Forward voltage ranges from 0.87 V to 1.00 V at 200 mA. Reverse leakage current is limited to 100 nA at 25°C and 100 μA at 150°C. The component utilizes a hermetically sealed glass D-5D case with tin/lead lead finish, suitable for operation between -65°C and +175°C.
Verify the specific ordering suffix against official documentation to confirm exact qualification levels and packaging configurations. Confirm that the D-5D glass package and tin/lead lead finish align with target assembly requirements. Ensure thermal management strategies account for the specified junction temperature limits and derating curves during high-current operation.
Select this component when a hermetically sealed glass package is required for harsh environments. Consider the axial coefficient of expansion (+4 PPM/°C) to ensure compatibility with the mounting surface system. Evaluate the thermal resistance characteristics relative to the expected power dissipation and ambient conditions.
This part belongs to the 1N6639US through 1N6641US series of switching diodes. These components are available in JAN, JANTX, JANTXV, and JANS variants per MIL-PRF-19500/609 specifications. They share similar physical dimensions and basic electrical structures while differing in voltage ratings and performance grades.
Substitute parts must match the D-5D hermetic glass package and axial configuration. Verify that replacement diodes meet the 75 V reverse voltage requirement and support the necessary operating temperature range.