1N6641US

Overview

The Microchip Technology 1N6641US is a small-signal switching diode housed in a hermetically sealed D-5D glass package. It features a peak repetitive reverse voltage of 75 V and a maximum average forward current of 300 mA. The device exhibits a maximum forward voltage of 1.10 V at 200 mA pulsed, with a reverse leakage current of 100 nA at +25°C and 100 µA at +150°C. Key dynamic parameters include a reverse recovery time of 5.0 ns and a junction capacitance of 3.0 pF. It operates within a temperature range of -65°C to +175°C.

Feature Summary

• Hermetically sealed non-cavity glass construction for environmental protection
• Metallurgically bonded design ensuring structural integrity
• Fast switching capability with low reverse recovery time
• Wide operating temperature range suitable for extreme conditions

Applications

• High-reliability computer logic circuits
• Signal processing in aerospace systems
• Military-grade electronic assemblies

Procurement Notes

Verify the specific revision level and lot traceability upon receipt. Confirm that the lead finish matches tin/lead specifications if required by the assembly process. Ensure storage conditions remain within the specified limits to maintain hermetic seal integrity. Cross-reference the manufacturer's latest datasheet for any updates to mechanical dimensions or electrical tolerances before finalizing procurement orders.

Selection Notes

Select this component when high reliability and radiation hardness are required. The D-5D package offers superior thermal performance compared to standard plastic packages. Consider the coefficient of expansion match between the device and the mounting surface to prevent mechanical stress during thermal cycling. Verify that the 75 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.

Part Context

This part belongs to the 1N6639US through 1N6641US series of switching diodes manufactured under MIL-PRF-19500/609 standards. The series includes variants with different reverse voltage ratings, such as the 1N6639US (100 V) and 1N6640US (75 V). These components are designed for critical applications requiring consistent performance across wide temperature ranges.

Replacement Considerations

Direct substitutes include JAN1N6641US and JANTX1N6641US, which share identical electrical characteristics and package dimensions. Ensure that any replacement maintains the same hermetic sealing and metallurgical bonding specifications to preserve reliability in harsh environments.

FAQ

What is the polarity marking on the 1N6641US?

The cathode end of the device is identified by a band.

How does the reverse leakage current change with temperature?

The reverse leakage current increases significantly with temperature, reaching a maximum of 100 µA at +150°C compared to 100 nA at +25°C.