1N6642U

Overview

The Microsemi 1N6642U is a hermetically sealed switching diode housed in the D-5D glass package. It features a peak repetitive reverse voltage of 100 V and a maximum forward current of 300 mA. The device exhibits an ultrafast recovery time of 5.0 ns with a forward voltage of 1.2 V at 10 mA. Operating temperatures range from -65°C to +175°C, supported by a thermal resistance of 50 °C/W.

Feature Summary

• Hermetically sealed metallurgically bonded glass package
• Ultrafast switching characteristics for high-frequency applications
• Extended operating temperature range up to 175°C

Applications

• High frequency DC-to-DC converters
• Step-down regulators
• Chopper drives

Procurement Notes

Verify the specific suffix (U or US) to confirm lead finish and package variant before ordering. Confirm that the procurement channel provides documentation compliant with MIL-PRF-19500/578 standards. Ensure the supply source can provide traceability records required for aerospace or defense specifications.

Selection Notes

Select this component when low leakage current and fast recovery are critical. The D-5D package requires matching the mounting surface coefficient of expansion to approximately +4 PPM/°C. Verify thermal management capabilities against the 50 °C/W junction-to-case resistance rating.

Part Context

This part belongs to the 1N66xxU series of radiation-hardened switching diodes. It shares the same package and electrical architecture as the 1N6638U and 1N6643U, differentiated primarily by its 100 V breakdown voltage rating.

Replacement Considerations

JAN1N6642U

FAQ

What is the polarity marking on the device?

The cathode end is identified by a band.

How does the reverse current behave at elevated temperatures?

Reverse current increases significantly at higher junction temperatures, reaching 100 µA at 150°C under rated reverse voltage conditions.