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The Microchip Technology 1N6656 is a single standard rectifier diode designed for through-hole mounting in the TO-254AA package. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current rating of 20 A. The device utilizes a silicon planar junction construction with a hermetically sealed glass passivated chip. Key electrical characteristics include a maximum RMS isolation voltage of 280 V, a non-repetitive peak forward surge current capability of 300 A at 60 Hz, and a maximum DC blocking leakage current of 10 mA at rated voltage.
Verify the manufacturer source carefully as multiple entities distribute this part number. Confirm the specific datasheet version matches your design requirements, particularly regarding the package outline dimensions and thermal resistance values. Ensure the component meets any applicable military or industrial reliability standards if specified in your bill of materials.
Select this component when a robust, high-current through-hole rectifier is required for 200 V applications. The TO-254AA package provides superior heat dissipation compared to smaller packages. Consider the 20 A continuous current rating against your circuit's load profile and ambient temperature conditions to ensure safe operating margins.
This component belongs to the family of discrete silicon rectifiers manufactured by Microchip Technology. It serves as a fundamental building block in power electronics, offering a balance of current capacity and voltage blocking capability. The part is distinct from ultra-fast variants within the same numbering series, which feature different recovery times.
Cross-reference with other 20 A, 200 V through-hole rectifiers in the TO-254AA package. Verify pinout compatibility and thermal performance metrics before substitution.