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The Microchip Technology 1N6677 is a Schottky barrier rectifier featuring a 40 V repetitive reverse voltage rating and a 200 mA average forward current. It utilizes silicon technology in an axial-leaded DO-35 package. The device exhibits a maximum forward voltage of 500 mV at rated current and supports a 5 A non-repetitive forward surge current. Operating temperatures range from -65°C to +125°C. This component is part of the JEDEC registered 1N6675 through 1N6677 series, designed for high-efficiency rectification applications requiring low power loss.
Verify the specific suffix against official Microchip documentation to confirm qualification level and packaging format. Commercial versions differ from military qualifications such as JAN or JANTXV. Confirm RoHS compliance status for the exact ordered variant. Ensure the DO-35 package dimensions match the target PCB layout requirements before finalizing procurement.
Select this component when low forward voltage drop is critical for system efficiency. The 40 V rating suits low-voltage DC systems. Verify that the 200 mA continuous current meets load demands. Consider thermal management within the DO-35 package limits. Compare against higher voltage variants if transient spikes exceed specifications.
This device belongs to the 1N6675-1 through 1N6677-1 series of Schottky barrier rectifiers manufactured by Microchip Technology. The series offers 200 mA and 500 mA ratings in hard glass DO-35 packages. The 1N6677 specifically provides the 40 V breakdown option within this lineup, serving as a standard solution for small-signal rectification tasks.
Direct substitutes include other 1N6677 variants from different manufacturers meeting identical electrical specs. Cross-reference DO-35 packaged Schottky diodes with 40 V and 200 mA ratings. Ensure pinout compatibility and thermal characteristics align with existing circuit designs.