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Product Detailed Parameters
- Description：DIODE SCHOTTKY
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
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Overview
The Microchip Technology 1N6701US is a surface-mount Schottky barrier rectifier designed for high-efficiency power conversion applications. It features a maximum repetitive peak reverse voltage of 30 V and an average forward rectified current rating of 5 A. The device utilizes a D-5C (SQ-MELF, C) package to facilitate automated assembly in compact circuit designs. Electrical characteristics include a typical forward voltage drop of 470 mV at the rated current and a maximum reverse leakage current of 200 µA at 30 V. The component operates within a junction temperature range of -65°C to +125°C.
Feature Summary
- Schottky barrier technology ensures low forward voltage drop and minimal switching losses.
- Surface mount D-5C package design supports efficient PCB space utilization.
- High thermal stability allows reliable operation across extended industrial temperature ranges.
Applications
- DC-DC converter circuits requiring high efficiency
- Power supply freewheeling diodes
- Reverse polarity protection in electronic systems
Procurement Notes
Verify the specific suffix US against official Microchip documentation to confirm the SQ-MELF package configuration. Confirm RoHS compliance status as datasheets may indicate non-compliance with certain directives. Validate the manufacturer part number directly with authorized distributors to ensure authenticity and traceability before procurement.
Selection Notes
Select this component when a low-loss rectification solution is required for moderate voltage levels up to 30 V. The 5 A current rating suits applications where space constraints preclude through-hole packages. Ensure the operating environment remains within the specified -65°C to +125°C junction temperature limits for optimal performance and longevity.
Part Context
The 1N6701 belongs to the standard 1N series of semiconductor devices, adapted into modern surface-mount formats by Microchip Technology. This series historically established benchmarks for silicon rectifiers, with the 1N6701 variant specifically optimized for higher current densities in compact SMD footprints compared to legacy axial equivalents.
Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference electrical parameters such as Vf and Ir strictly before implementation.
