1N6761UR-1

Overview

The Microchip Technology 1N6761UR-1 is a small-signal Schottky rectifier designed for high-efficiency switching applications. It features a 100 V repetitive reverse voltage rating and supports an average forward current of 1 A. The device utilizes silicon technology in a MELF package (DO-213AB) with round-end construction. Key electrical characteristics include a maximum forward voltage of 690 mV at 1 A and a peak forward surge current capability of 25 A. It operates within a junction temperature range of -65°C to +150°C, ensuring reliability in demanding environments.

Feature Summary

• Schottky barrier construction provides low forward voltage drop and fast switching speeds.
• Round-end design minimizes surface leakage currents for improved reliability.
• MELF (DO-213AB) package offers robust mechanical stability and hermetic sealing.

Applications

• High-frequency power supply rectification
• Free-wheeling diodes in DC-DC converters
• Reverse polarity protection circuits

Procurement Notes

Verify the specific qualification level (e.g., JAN, JANTX) required for your application, as suffixes indicate different reliability standards. Confirm that the MELF/DO-213AB package format aligns with your PCB footprint and automated assembly capabilities. Ensure thermal management strategies account for the specified operating temperature range during system integration.

Selection Notes

Select this component when low forward voltage and high-speed recovery are critical compared to standard PN junction diodes. The 1A current rating suits moderate power applications where efficiency losses must be minimized. Consider the MELF package constraints regarding soldering profiles and handling procedures distinct from axial leaded equivalents.

Part Context

This part belongs to the 1N6761 series of Schottky barrier rectifiers manufactured by Microchip Technology. The series includes variants with different voltage ratings and packaging options, such as through-hole DO-41 versions. The UR-1 designation specifically identifies the surface-mount MELF configuration with defined electrical parameters for industrial and commercial use.

FAQ

What is the difference between the 1N6761UR-1 and the axial 1N6761-1?

The primary difference is the package style; the 1N6761UR-1 uses a surface-mount MELF (DO-213AB) package, while the 1N6761-1 uses a through-hole DO-41 axial leaded package. Both share similar electrical characteristics like 100V rating and 1A current capacity.

Does the 1N6761UR-1 support high-temperature operation?

Yes, the device is rated for a maximum junction temperature of +150°C, allowing it to function reliably in elevated thermal environments common in automotive and industrial electronics.