1N6770

1N6770

$146.99
  • Description:DIODE ARRAY GP 150V 8A TO-257
  • Series:-

SKU:bb333e87b185 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 150V 8A TO-257
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):8A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.06 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 120 V
  • Operating Temperature - Junction:-
  • Mounting Type:Through Hole
  • Package / Case:TO-257-3
  • Supplier Device Package:TO-257
  • Grade:-
  • Qualification:-

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1N6770

Overview

The Microchip Technology 1N6770 is a silicon rectifier diode array featuring one phase and two elements in a common cathode configuration. It provides a maximum average forward output current of 8 A and a peak repetitive reverse voltage of 150 V. The device supports a maximum non-repetitive peak forward surge current of 60 A. Housed in a hermetically sealed metal TO-257AA flange mount package with three terminals, the component offers an isolated case connection for efficient thermal management.

Feature Summary

  • Hermetically sealed metal construction ensures high reliability and environmental protection
  • Common cathode dual element design simplifies circuit topology
  • Isolated flange mount package facilitates effective heat dissipation

Applications

  • Power supply rectification circuits
  • General purpose switching applications
  • High reliability electronic systems

Procurement Notes

Verify that the specific ordering suffix matches the required military or commercial grade specifications, as prefixes such as JAN or JANTX denote distinct qualification levels. Confirm the physical package integrity to ensure the hermetic seal remains uncompromised during handling. Cross-reference the manufacturer datasheet to validate terminal pinout compatibility with existing board layouts before finalizing procurement orders.

Selection Notes

Select this component when a robust, high-current rectifying solution with fast recovery characteristics is required. The TO-257AA package is suitable for applications demanding superior thermal performance through direct mounting. Ensure the operating junction temperature range aligns with the system's environmental constraints and that the 150 V reverse voltage rating exceeds the peak line voltages present in the target circuit design.

Part Context

This part belongs to the 1N67xx series of silicon rectifier diodes manufactured by Microchip Technology. The series includes variants such as 1N6768 through 1N6773, offering different voltage ratings within the same package family. Military-grade versions are available under JAN prefixes, providing enhanced screening and reliability standards for aerospace and defense applications requiring strict quality control.

Replacement Considerations

Direct substitutes include other 1N6770 variants from the same manufacturer family, such as JAN1N6770 or JANTX1N6770, which share identical electrical parameters but differ in qualification level. Verify that any alternative replacement maintains the TO-257AA footprint and common cathode configuration to ensure mechanical and electrical interchangeability without redesigning the host circuit.

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