1N6816R

Overview

The MSASC25W45KR (1N6816R) is a low leakage Schottky diode featuring a tungsten barrier and oxide passivated structure. It operates with a peak repetitive reverse voltage of 45 Volts and an average rectified forward current of 25 Amps at case temperatures up to 145°C. The device utilizes a hermetically sealed, low profile ceramic surface mount package designed for very low thermal resistance and low package inductance. Electrical characteristics include a maximum junction temperature range of -55°C to +175°C and a nonrepetitive peak surge current capability of 125 Amps.

Feature Summary

• Tungsten schottky barrier construction
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop

Applications

• High frequency power conversion circuits
• Reverse polarity protection systems
• Free wheeling applications in DC-DC converters

Procurement Notes

Verify the specific ordering suffix 'R' confirms the reverse polarity configuration where the strap connects to the cathode, distinct from the standard polarity variant. Ensure the procurement documentation explicitly references the MSASC25W45KR part number to guarantee the correct hermetically sealed ceramic surface mount package and electrical specifications are supplied.

Selection Notes

Select this component when designing circuits requiring high reliability under extreme thermal conditions due to its wide operating junction temperature range. The low forward voltage drop and low leakage currents make it suitable for efficient power management applications. Consider the specific thermal resistance values associated with the ceramic package when calculating heat dissipation requirements for the system design.

Part Context

This component belongs to the MSASC series of low leakage Schottky diodes manufactured by Microsemi (now Microchip Technology). The series is characterized by its use of tungsten barrier technology and epitaxial structures to optimize performance metrics such as forward voltage and reverse leakage. These devices are engineered for robust operation in demanding industrial and automotive environments.

Replacement Considerations

The standard polarity equivalent is the MSASC25W45K (1N6816), which features a strap-to-anode configuration. When substituting, verify that the circuit layout accommodates the reverse polarity strap connection of the 1N6816R variant to ensure proper electrical isolation and functionality within the assembly.