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The 1N6845 is a silicon Schottky rectifier diode manufactured by Microchip Technology. It features a single-phase, one-element configuration with a maximum average forward rectified current of 30 A and a repetitive peak reverse voltage of 45 V. The device utilizes a ceramic, metal-sealed cofired package in a chip carrier form factor with three terminals. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 300 A and a maximum forward voltage of 0.86 V. The component is designed for general-purpose applications and operates within a temperature range of -65 °C to 150 °C.
Verify the specific manufacturer designation, as historical data links this part number to Microsemi, now part of Microchip Technology. Confirm RoHS compliance status, as some variants may be non-compliant. Ensure the package type matches the required ceramic, metal-sealed cofired specification. Check for any specific military or high-reliability certifications if applicable to the intended deployment environment.
Select this component when a high-current rectifier with low forward voltage drop is required. The 30 A rating supports substantial load currents, while the 45 V reverse voltage limit defines the maximum operating potential. Consider the wide operating temperature range for thermal management. Verify that the surface-mount chip carrier package fits the board layout constraints compared to through-hole alternatives.
This component belongs to the family of high-power Schottky rectifiers produced by Microchip Technology (formerly Microsemi). These devices are engineered to provide efficient power conversion with minimal energy loss. The use of silicon Schottky technology distinguishes it from standard PN-junction rectifiers, offering faster switching characteristics and reduced heat generation under heavy load conditions.
Publicly confirmed substitute part numbers are not available in the provided documentation.