1N6858-1/TR

Overview

The Microchip Technology 1N6858-1/TR is a small-signal Schottky diode manufactured using silicon technology. It is housed in the SQ-MELF surface-mount package and operates within a junction temperature range of -65°C to 125°C. The device features a maximum repetitive peak reverse voltage of 70V and an average forward rectified current rating of 75mA. It exhibits a low forward voltage drop of 400mV at a forward current of 10mA, with a maximum reverse leakage current of 1µA at 70V. This component is designed for high-speed switching applications requiring low power consumption.

Feature Summary

• Utilizes Schottky barrier technology for fast switching performance
• Features a compact SQ-MELF surface-mount package design
• Provides low forward voltage drop characteristics
• Capable of operation across extended industrial temperature ranges

Applications

• High-speed signal rectification circuits
• Power supply input protection stages
• Clamping diodes in digital logic interfaces
• Low-power RF detection applications

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm tape-and-reel packaging and RoHS compliance status. Confirm that the requested part number matches the exact electrical specifications required for your circuit design. Ensure compatibility with existing assembly processes for the SQ-MELF package type before finalizing procurement orders.

Selection Notes

Select this component when a small-form-factor Schottky diode is required for low-voltage, low-current applications. The SQ-MELF package offers space-saving advantages over traditional axial leads. Consider the 70V reverse voltage rating and 75mA current capacity to ensure adequate headroom for your specific circuit operating conditions.

Part Context

This component belongs to the 1N6858 series of small-signal Schottky diodes produced by Microchip Technology. The series is characterized by its use of silicon planar technology and availability in various surface-mount packages. These diodes are engineered to provide reliable performance in consumer electronics and industrial equipment where size and switching speed are critical design parameters.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Cross-reference electrical parameters such as reverse voltage, forward current, and package dimensions to ensure functional compatibility with the original design requirements.