1N6858UR-1/TR

Overview

The JAN1N6858UR-1/TR is a small-signal Schottky diode manufactured by Microchip Technology. It features a round-end surface-mount package and utilizes silicon technology. The device is rated for a maximum repetitive peak reverse voltage of 70V and an average forward current of 75mA. It is designed for general-purpose applications requiring low forward voltage drop and high switching speed.

Feature Summary

• Schottky barrier construction for low forward voltage drop
• Silicon dioxide passivation for environmental stability
• Round-end surface-mount package design

Applications

• General-purpose rectification
• High-speed switching circuits
• Clamping and protection applications

Procurement Notes

Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration. Confirm RoHS compliance status directly with the manufacturer, as military-grade variants may have different regulatory markings. Ensure the component meets all required environmental specifications for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component when a low-profile surface-mount Schottky diode is required for efficient power conversion or signal clamping. Consider the 70V reverse voltage rating and 75mA current capacity against circuit demands. Evaluate the thermal performance and package constraints relative to the PCB layout requirements.

Part Context

This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the Schottky diodes and rectifiers category. It serves as a specialized component for designs requiring reliable high-frequency operation and minimal power loss in compact form factors.

Replacement Considerations

Consult official Microchip documentation for verified cross-reference data. No public substitute part numbers are confirmed in the available source material.