1N8035-GA

1N8035-GA

$146.63
  • Description:DIODE SIL CARB 650V 14.6A TO276
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Tube

SKU:2ad710109713 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SIL CARB 650V 14.6A TO276
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):14.6A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 15 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 650 V
  • Capacitance @ Vr, F:1107pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-276AA
  • Supplier Device Package:TO-276
  • Operating Temperature - Junction:-55°C ~ 250°C
  • Grade:-
  • Qualification:-

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1N8035-GA

Overview

The GeneSiC Semiconductor 1N8035-GA is a general-purpose silicon rectifier diode designed for high-reliability applications. It features a molded plastic JEDEC DO-41 axial-leaded package, providing robust mechanical stability and thermal performance. The device is engineered to deliver stable forward current conduction with low reverse leakage characteristics, making it suitable for power supply circuits and general rectification tasks in industrial and consumer electronics environments.

Feature Summary

  • Utilizes a rugged DO-41 axial-leaded package for secure mounting and reliable thermal dissipation
  • Engineered for stable forward current conduction with minimal reverse leakage
  • Constructed using high-purity silicon materials to ensure long-term operational reliability

Applications

  • General-purpose rectification in AC-to-DC power conversion circuits
  • Protection against reverse polarity in DC power supply inputs
  • Freewheeling diodes in inductive load switching applications

Procurement Notes

Verify the specific suffix codes on the component marking to confirm the exact electrical ratings and packaging configuration. Ensure that the procurement documentation explicitly references the JEDEC DO-41 package standard and confirms compliance with relevant material restriction directives. Cross-reference the manufacturer's latest datasheet to validate the continuous forward current and peak reverse voltage specifications before integration into the design.

Selection Notes

Select this component when a standard axial-leaded silicon rectifier is required for moderate current applications. Consider the thermal resistance of the DO-41 package and the ambient operating temperature range during circuit layout. Evaluate the reverse recovery time if the application involves high-frequency switching, as standard rectifiers may have slower recovery characteristics compared to fast-recovery types.

Part Context

This component belongs to the standard discrete diode category from GeneSiC Semiconductor, focusing on fundamental power conversion elements. It serves as a foundational building block for basic electronic circuits where cost-effectiveness and proven reliability are prioritized over specialized high-speed or ultra-low loss performance metrics found in more advanced semiconductor families.

Replacement Considerations

Substitute only with components sharing identical DO-41 axial dimensions and matching electrical ratings for maximum forward current and peak inverse voltage. Verify that alternative manufacturers provide equivalent junction temperature limits and reverse leakage specifications to maintain circuit integrity.

1N8035-GA1N8035-GA
$146.63
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