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The 1PS66SB82,115 is an epitaxial low capacitance Schottky barrier diode manufactured by Nexperia USA Inc. It features a triple isolated diode configuration housed in a SOT-666 plastic surface-mounted package with six leads. The device supports a continuous forward current of 30 mA and a continuous reverse voltage of 15 V. Key electrical characteristics include a maximum forward voltage of 700 mV at 30 mA, a differential resistance of 12 ohms at 5 mA, and a diode capacitance of 1 pF at 0 V reverse bias and 1 MHz frequency. The junction temperature rating reaches 125 °C.
Verify the specific ordering suffix to confirm the packing method, as the -115 designation indicates tape and reel packaging. Confirm the component status directly with the manufacturer or authorized distributors, as product availability may change. Ensure the supplier provides valid traceability documentation matching the Nexperia part number before finalizing acquisition.
Select this component when space constraints require a triple diode solution in a minimal footprint. The low capacitance specification makes it suitable for high-frequency signal processing tasks. Verify that the 15 V reverse voltage and 30 mA forward current ratings align with the circuit requirements. Consider the thermal resistance characteristics if multiple diodes operate simultaneously under load.
This component belongs to the 1PS66 series of low capacitance Schottky barrier diodes. It shares technical similarities with the 1PS88SB82, which utilizes a different SOT-363 package but maintains identical electrical performance specifications. Both variants are designed for compact digital and RF applications requiring fast switching speeds.
The 1PS88SB82 serves as a functional equivalent utilizing the SOT-363 package. Verify pin compatibility and physical dimensions during substitution to ensure proper board layout integration.