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The 1SS375-TL-E is a silicon epitaxial Schottky barrier diode manufactured by onsemi. It features a compact SC-70 (SOT-323) package and contains one pair of series-connected diodes. The device is optimized for high-speed and low-voltage operations, providing excellent performance for analog applications. Key electrical specifications include a peak reverse voltage of 10V and a forward current rating of 35 mA. This component is designed for use in RF applications where low forward voltage drop and fast switching are critical requirements.
Verify the part status carefully as some distributor listings indicate this specific variant may be obsolete. Confirm the exact suffix 'TL-E' matches your bill of materials, as variations exist. Ensure the SC-70 package footprint aligns with your PCB design. Cross-reference the manufacturer's official documentation to confirm current availability and lifecycle status before finalizing procurement plans.
Select this component when a small form factor is required alongside Schottky characteristics. The series connection internal structure simplifies circuit layout compared to discrete components. Consider the 10V reverse voltage limit and 35 mA current rating during design. Evaluate thermal constraints associated with the SOT-323 package for your specific power dissipation needs.
This device belongs to onsemi's portfolio of RF diodes and intelligent power solutions. It utilizes silicon epitaxial technology to achieve reliable performance in demanding environments. The product line supports various industrial and consumer electronics applications requiring efficient rectification and signal detection.
Public confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support or authorized distributors for verified alternatives if this specific part number is unavailable.