1SV249-TL-E

Overview

The onsemi 1SV249-TL-E is a silicon planar varactor diode designed for high-frequency tuning applications. It features a maximum DC reverse voltage of 30 V and a capacitance range spanning from 0.5 pF to 6.0 pF at a reverse bias of 5 V. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a compact SOD-323 surface-mount package.

Feature Summary

• Utilizes silicon planar technology for stable performance
• Provides variable capacitance suitable for RF tuning circuits
• Supports operation at elevated temperatures up to 150 °C

Applications

• RF tuner circuits
• Voltage-controlled oscillators (VCOs)
• Frequency synthesizers

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and material declarations directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component based on required capacitance ratios and Q-factor specifications at target frequencies. Ensure the operating voltage remains within the 30 V limit and thermal constraints are met for the intended application environment.

Part Context

This part belongs to onsemi's portfolio of discrete semiconductor devices, specifically varactor diodes used in radio frequency and microwave systems. It serves as a voltage-variable capacitor for electronic tuning functions.

Replacement Considerations

Consult official substitution guides for equivalent varactor diodes with matching capacitance ranges and package types. Verify pinout compatibility and electrical characteristics before implementing any alternative components.