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The onsemi 1SV267-FRD-TB-E is a PIN diode configured as one pair in series, designed for RF applications. It features a maximum peak reverse voltage of 50V and a maximum forward current of 50 mA. The device has a maximum power dissipation of 150 mW and operates at junction temperatures up to 125°C. Electrical characteristics include a capacitance of 0.23pF at 50V reverse bias and 1MHz frequency, with a resistance of 2.5 ohms at 10mA forward current and 100MHz frequency. It is housed in a 3-CP package, equivalent to TO-236-3, SC-59, or SOT-23-3.
Verify the specific suffix 'FRD' against official manufacturer documentation, as standard listings often reference 'TB-E'. Confirm component availability status, as related models may be subject to end-of-life notices. Ensure RoHS compliance matches project requirements by checking the latest material declaration.
Select this component when a low-capacitance, series-connected PIN diode is required for RF paths. Verify that the 50V reverse voltage rating meets the circuit's peak inverse voltage needs. Check if the SOT-23-3 form factor fits the board layout constraints compared to larger packages.
This part belongs to the 1SV267 series of RF PIN diodes from onsemi. These devices are typically used in communication equipment requiring precise RF control. The series offers various packaging options and electrical ratings tailored for different frequency bands and power levels.
The 1SV264-TL-E is listed as a manufacturer-recommended alternative. Verify pinout compatibility and electrical parameter alignment before substitution.