1SV270TPH3F

Overview

The Toshiba Semiconductor and Storage 1SV270TPH3F is a silicon epitaxial planar variable capacitance diode designed for UHF band radio voltage-controlled oscillators. It operates with a maximum reverse voltage of 10 V and a junction temperature rating of 125 °C. Electrical characteristics at 25 °C include a typical capacitance of 16 pF at 1 V reverse bias (1 MHz) and 8.0 pF at 4 V reverse bias (1 MHz). The device achieves a typical capacitance ratio of 2.0 and maintains a low series resistance of 0.28 Ω at 470 MHz.

Feature Summary

• High capacitance ratio for effective tuning range
• Low series resistance to minimize signal loss
• Compact surface-mount package design

Applications

• Voltage-controlled oscillators for UHF band radio
• Tuning circuits in RF communication equipment
• Frequency modulation modules

Procurement Notes

Verify the specific ordering suffix TPH3F against official Toshiba documentation to confirm compliance with current environmental standards and marking requirements. Confirm availability status directly with authorized distributors, as component lifecycle stages may affect procurement options.

Selection Notes

Select this component when designing UHF band circuits requiring a stable capacitance ratio near 2.0 and minimal series resistance. Ensure the operating environment remains within the specified -55 °C to 125 °C storage temperature range and that the applied reverse voltage does not exceed the 10 V absolute maximum rating.

Part Context

This part belongs to the 1SV270 family of variable capacitance diodes manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon epitaxial planar structure optimized for RF applications. The component is distinct from other 1SV series parts based on its specific capacitance values and packaging configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components by matching electrical parameters such as capacitance, reverse voltage, and package type.