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The Toshiba Semiconductor and Storage 1SV305,L3F is a silicon epitaxial planar variable capacitance diode designed for VHF band radio voltage-controlled oscillators. It features a compact 1-1G1A package with dimensions of 1.2 x 0.8 x 0.6 mm. Key electrical parameters include a maximum reverse voltage of 10 V, a junction temperature rating of 125 °C, and a typical capacitance ratio (C1V/C4V) of 3.0 at 1 MHz. The device exhibits a low series resistance of 0.27 Ω at 470 MHz, supporting efficient tuning performance in high-frequency applications.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as tape-and-reel specifications or marking codes. Ensure compliance with RoHS directives and environmental regulations relevant to your region before procurement. Confirm that the component meets the required reliability standards for your intended application environment.
Select this component when a high capacitance ratio and low series resistance are critical for VHF oscillator stability. Evaluate the 10 V reverse voltage limit against peak circuit voltages to ensure safe operation within absolute maximum ratings. Consider the small footprint if board space is limited compared to larger varactor packages.
This part belongs to Toshiba's line of silicon epitaxial planar variable capacitance diodes. These components are engineered specifically for RF tuning applications where consistent capacitance variation over a voltage range is required. The 1SV305 model represents a standard offering for general-purpose VHF tuning tasks.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical characteristics with alternative manufacturers if cross-referencing is necessary.