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The Toshiba 1SV239 is a silicon epitaxial planar variable capacitance diode designed for VCO applications in UHF radio systems. It features an ultra-low series resistance of 0.44 Ω (typical) at 470 MHz, making it suitable for small-size equipment. The device has a maximum reverse voltage rating of 15 V and a junction temperature limit of 125 °C. Electrical characteristics include a typical capacitance of 4.25 pF at 2 V reverse bias and 1.75 pF at 10 V reverse bias, both measured at 1 MHz. The capacitance ratio between these two bias points typically ranges from 2.0 to 2.4.
Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm package type and tape-and-reel specifications. Ensure compliance with environmental directives such as RoHS by checking the latest product information sheets provided by the manufacturer before procurement.
Select this component when low series resistance is critical for minimizing insertion loss in UHF frequency bands. Verify that the required capacitance range at operating voltages aligns with the specified C2V and C10V values. Confirm thermal management capabilities meet the 125 °C junction temperature requirement for the target application environment.
This component belongs to the Toshiba variable capacitance diode family, utilizing silicon epitaxial planar technology. It is engineered to provide precise capacitance variation under reverse bias conditions, serving as a key tuning element in RF signal generation and processing circuits within consumer and industrial electronics.
Consult official Toshiba cross-reference lists or distributor databases for verified equivalent part numbers. Ensure any substitute maintains comparable series resistance and capacitance ratios at identical test frequencies and bias voltages.