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The Toshiba 1SV229TPH3F is a silicon epitaxial planar variable capacitance diode designed for UHF band radio applications. It features an ultra-low series resistance of 0.2 Ω typical at 5 V reverse bias and 470 MHz. The device operates with a maximum reverse voltage of 15 V and exhibits a capacitance ratio of 2.5 between 2 V and 10 V reverse voltages. Capacitance values are 15 pF at 2 V and 6 pF at 10 V, measured at 1 MHz. The component supports junction temperatures up to 125 °C and is housed in a compact USC-2 package.
Verify the specific ordering suffix TPH3F against official Toshiba documentation to confirm packaging details such as reel quantity or tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.
Select this component when low insertion loss and high Q-factor are critical for UHF frequency stability. Evaluate the 15 V reverse voltage limit against peak RF signals to prevent breakdown. Consider the USC-2 footprint constraints during PCB layout to maintain thermal and electrical performance.
This part belongs to Toshiba's line of silicon epitaxial planar varactor diodes. These components utilize advanced manufacturing processes to achieve consistent capacitance-voltage characteristics. The 1SV229 specifically targets applications requiring minimal parasitic effects in compact form factors.
Check for direct substitutes within the 1SV series that match the 15 V rating and USC-2 package. Verify equivalent capacitance ratios and series resistance values to ensure circuit compatibility without redesigning the tuning network.